? 2005 ixys all rights reserved polarhv tm hiperfet power mosfet ixfh 36n60p v dss = 600 v ixft 36n60p i d25 = 36 a ixfk 36n60p r ds(on) 190 m ? ? ? ? ? t rr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = 0.5 i d25 190 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 650 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247 & to-264) 1.13/10 nm/lb.in. weight to-247 6 g to-268 5 g to-264 10 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s preliminary data sheet s g d (tab) to-264 aa (ixtk) g = gate d = drain s = source tab = drain advance technical information g d s to-247 (ixfh) d (tab) g s to-268 (ixtt) case style d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 36n60p ixft 36n60p ixfk 36n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 25 39 s c iss 5800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 570 pf c rss 30 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 i d25 25 ns t d(off) r g =2 ? (external) 80 ns t f 22 ns q g(on) 102 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 34 nc q gd 36 nc r thjc 0.19 k/w r thck to-247 0.21 k/w r thck to-264 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v 0.8 c i rm 6.0 a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-268 outline to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 036912151821242730 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 36 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 36a i d = 18a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 102030405060708090 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v ixfh 36n60p ixft 36n60p ixfk 36n60p
ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v g s - volts v ds = 300v i d = 18a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 10203040506070 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - millisec onds r ( t h ) j c - o c / w ixfh 36n60p ixft 36n60p ixfk 36n60p
|
